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relates: On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime

Academic Article
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On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime
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RDF description of On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime - http://irises.unimore.it/resource/item/175935
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date: 2026-08-13T03:35:57
publisher: On Interface and Oxide Degradation in VLSI MOSFETs - Part I: Deuterium Effect in CHE Stress Regime
type: Document