Document
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Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application
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related by: 12311348
language: Inglese
most specific type: Academic Article
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type: Document
type: Academic Article
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12311348
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relates: Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application

Academic Article
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Continuant
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Entity
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Generically Dependent Continuant
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Article
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Information Content Entity
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Inglese
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individual
rights: termsOfUse
date: 2026-08-13T03:31:10
publisher: Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application
type: Document
label: RDF description of Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application - http://irises.unimore.it/resource/item/176014