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Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs
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6811136
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relates: Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs

RDF description of Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs - http://irises.unimore.it/resource/item/20237
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date: 2026-08-13T03:31:10
publisher: Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs
type: Document