19342491
type: Entity
type: BFO_0000020
type: Authorship
type: Relationship
type: Continuant
type: Thing
relates: HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method

Document
type: Class

Patent
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Information Content Entity
type: Class

HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
type: Document
type: Thing
type: Generically Dependent Continuant
related by: 19342491
language: Inglese
type: Information Content Entity
most specific type: Patent
type: Entity
type: Patent
type: Continuant

Inglese
type: Language

Continuant
type: Class

Entity
type: Class

Generically Dependent Continuant
type: Class

individual
rights: termsOfUse
date: 2026-08-24T12:48:52
publisher: HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method
type: Document
label: RDF description of HEMT transistor of the normally off type including a trench containing a gate region and forming at least one step, and corresponding manufacturing method - http://irises.unimore.it/resource/item/205993