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Academic Article
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Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)
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language: Inglese
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related by: 1360253
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1360253
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relates: Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

Article
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Information Content Entity
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Inglese
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RDF description of Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) - http://irises.unimore.it/resource/item/34654
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date: 2026-08-13T03:32:58
publisher: Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)
type: Document