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relates: A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks

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Academic Article
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Continuant
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Article
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A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks
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type: Academic Article
language: Inglese
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related by: 3220291

RDF description of A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks - http://irises.unimore.it/resource/item/68254
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date: 2026-08-13T03:25:36
publisher: A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks
type: Document