Document
Academic Article
Generically Dependent Continuant
Article
Information Content Entity
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks
RDF description of A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks - http://irises.unimore.it/resource/item/68254