Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps

We propose a novel spectroscopic technique that allows determining the defect density distributions within metal-electrode-sandwiched dielectric based on J-V and C-V characteristics. The technique relies on determining "sensitivity regions" corresponding to the energy-spatial coordinates of defects affecting J-V and C-V curves. This technique is then demonstrated on RuOx/SrTiOx/RuOx metal-insulator-metal structures for DRAM capacitor applications.