Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal
Articolo
Data di Pubblicazione:
1993
Citazione:
Giant radiation damage produced by the impact of heavy molecular ions onto silicon single crystal / Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 80-81:(1993), pp. 132-136. [10.1016/0168-583X(93)96092-Q]
Abstract:
The giant radiation damage imparted to single-crystalline silicon by the impact of Re2(CO)2+ at 140 keV is studied by conventional and high-resolution transmission electron microscopy. Evidence for damage produced by the correlated motion of the atoms initially forming the molecular ion is presented.
Tipologia CRIS:
Articolo su rivista
Keywords:
Ion implantation; Silicon; giant damage
Elenco autori:
Cerofolini, Gf; Bertoni, S; Meda, L; Balboni, R; Corni, Federico; Frabboni, Stefano; Ottaviani, Giampiero; Tonini, Rita; Para, Af
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