Development of a detector-compatible JFET technology on high-resistivity silicon

Articolo
Data di Pubblicazione:
1998
Citazione:
Development of a detector-compatible JFET technology on high-resistivity silicon / Dalla Betta, G. F.; Boscardin, M.; Pignatel, G. U.; Verzellesi, Giovanni; Bosisio, L.; Ferrario, L.; Zen, M.; Soncini, G.. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 409:(1998), pp. 346-350. [10.1016/S0168-9002(97)01296-3]
Tipologia CRIS:
Articolo su rivista
Keywords:
PIN diode; silicon detectors; high resistivity silicon; JFET; charge amplifier.
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/15866
Pubblicato in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Journal