Data di Pubblicazione:
2007
Citazione:
Insulating ground state of Sn/Si(111)-(root 3x root 3)R30 degrees / Modesti, S; Petaccia, L; Ceballos, G; Vobornik, I; Panaccione, G; Rossi, Giorgio; Ottaviano, L; Larciprete, R; Lizzit, S; Goldoni, A.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 98:12(2007), pp. N/A-N/A. [10.1103/PhysRevLett.98.126401]
Abstract:
The Sn/Si(111)-(root 3 x root 3) R30 degrees surface was so far believed to be metallic according to the electron counting argument. We show, by using tunneling spectroscopy, scanning tunneling microscopy, photoemission, and photoelectron diffraction, that below 70 K this surface has a very low density of states at the Fermi level and is not appreciably distorted. The experimental results are compatible with the insulating Mott-Hubbard ground state predicted by LSDA+U calculations [G. Profeta and E. Tosatti, Phys. Rev. Lett. 98, 086401 (2007)].
Tipologia CRIS:
Articolo su rivista
Keywords:
low dimensional electron states; high resolution ARPES; low temperature phase transitions
Elenco autori:
Modesti, S; Petaccia, L; Ceballos, G; Vobornik, I; Panaccione, G; Rossi, Giorgio; Ottaviano, L; Larciprete, R; Lizzit, S; Goldoni, A.
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