Patterning and modeling of mechanically bent silicon plates deformed through coactive stresses
Articolo
Data di Pubblicazione:
2011
Citazione:
Patterning and modeling of mechanically bent silicon plates deformed through coactive stresses / Guidi, V.; Lanzoni, L.; Mazzolari, A.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 520:3(2011), pp. 1074-1079. [10.1016/j.tsf.2011.09.008]
Abstract:
In the present work a technique to impart a controlled deformation to a substrate through deposition of a thin film is shown. Such a technique allows film-substrate systems to be tailored with a desired shape for various applications. An analytical model has been applied to calculate the displacements and stresses of a patterned crystalline substrate. Analytical results have also been validated via Finite Element simulations. Si substrates have been patterned with Si3N4 and measurements of the transverse displacement were found to agree with the theoretical predictions. © 2011 Elsevier B.V. All rights reserved.
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Articolo su rivista
Keywords:
Crystal deformation; Patterning; Silicon nitride; Silicon plates; Stress; Electronic, Optical and Magnetic Materials; Surfaces and Interfaces; Surfaces, Coatings and Films; 2506; Materials Chemistry2506 Metals and Alloys
Elenco autori:
Guidi, V.; Lanzoni, L.; Mazzolari, A.
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