Data di Pubblicazione:
2004
Citazione:
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs / Verzellesi, Giovanni; A., Cavallini; Basile, Alberto Francesco; A., Castaldini; Canali, Claudio. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25:8(2004), pp. 517-519. [10.1109/LED.2004.831965]
Abstract:
Gate-lag transients and hole-like deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
Tipologia CRIS:
Articolo su rivista
Keywords:
Gallium compounds; Aluminum compounds; microwave power FETs; transient response; charge carrier processes
Elenco autori:
Verzellesi, Giovanni; A., Cavallini; Basile, Alberto Francesco; A., Castaldini; Canali, Claudio
Link alla scheda completa:
Pubblicato in: