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Theoretical approaches to the Schottky Barrier Problem

Articolo
Data di Pubblicazione:
1992
Citazione:
Theoretical approaches to the Schottky Barrier Problem / Ossicini, Stefano. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 56-58:(1992), pp. 290-300. [10.1016/0169-4332(92)90247-U]
Abstract:
The description of the electronic structure of an interface between two materials is one of the main goals of solid state theory. In the case of a metal-semiconductor interface a basic problem is the calculation of Schottky barriers. A review is presented in which different theories on the formation of the Schottky barrier are discussed. The role of the interface states and their physical origin are discussed. Particular attention will be paid to the question whether the barrier heights are influenced by the details of the interface structure.
Tipologia CRIS:
Articolo su rivista
Keywords:
Schottky barrier; metal-semiconductor interfaces
Elenco autori:
Ossicini, Stefano
Autori di Ateneo:
OSSICINI Stefano
Link alla scheda completa:
https://iris.unimore.it/handle/11380/305322
Pubblicato in:
APPLIED SURFACE SCIENCE
Journal
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