Charge particle detection properties of epitaxial 4H-SiC Schottky diodes
Contributo in Atti di convegno
Data di Pubblicazione:
2001
Citazione:
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes / Nava, Filippo; P., Vanni; Verzellesi, Giovanni; A., Castaldini; A., Cavallini; L., Polenta; R., Nipoti; C., Donolato. - STAMPA. - 353-356:(2001), pp. 757-762. ( 3rd European Conference on Silicon Carbide and Related Materials KLOSTER BANZ, GERMANY SEP, 2000) [10.4028/www.scientific.net/MSF.353-356.757].
Abstract:
This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Vaues of 500 ns and 95 us are inferred for the hole and electron lifetime respectively.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
minority carrier lifetime; recombination and trapping centers; solid state detectors
Elenco autori:
Nava, Filippo; P., Vanni; Verzellesi, Giovanni; A., Castaldini; A., Cavallini; L., Polenta; R., Nipoti; C., Donolato
Link alla scheda completa:
Titolo del libro:
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000
Pubblicato in: