Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials
Articolo
Data di Pubblicazione:
2013
Citazione:
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials / Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 88:(2013), pp. 54-60. [10.1016/j.sse.2013.04.017]
Abstract:
We present a semiclassical model for Tunnel-FET (TFET) devices capable to describe band-to-band tunneling
(BtBT) as well as far from equilibrium transport of the generated carriers. BtBT generation is implemented
as an add-on into an existing multi-subband Monte Carlo (MSMC) transport simulator that
accounts as well for the effects typical to alternative channel materials and high-j dielectrics. A simple
but accurate correction for the calculation of the BtBT generation rate to account for carrier confinement
in the subbands is proposed and verified by comparison with full 2D quantum calculation.
Tipologia CRIS:
Articolo su rivista
Keywords:
Tunnel FET; Multi-subband Monte Carlo; Band to band tunneling generation; Modeling
Elenco autori:
Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
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