Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs

Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs / Menozzi, R; Cova, P; Selmi, Luca. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 36:7(1993), pp. 1083-1087. [10.1016/0038-1101(93)90127-C]