Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs

The impact of fin thickness nonuniformities on carrier transport in n-type FinFETs is analyzed with a Multi-Subband Monte Carlo technique, which allows for an accurate description of the quasi-ballistic transport taking place in short channel devices and which comprises the dominant scattering mechanisms as well as a semi-empirical technique to handle quantization effects in the transport direction. We found that the impact of channel thickness discontinuity on the on-current is larger when the nonuniformities are located close to the Virtual Source of the device. Furthermore, the sensitivity of the on-current to thickness nonuniformity is essentially the same when considering devices with different crystal orientations. Comparison with drift-diffusion simulations reveals substantial differences in the predicted trends of the sensitivity of the drain current to thickness fluctuations in these nanoscale devices.