Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation
Articolo
Data di Pubblicazione:
1997
Citazione:
Analysis of hot electron degradation in pseudomorphic HEMTs by DCTS and LF noise characterisation / N., Labat; N., Saysset; A., Touboul; Y., Danto; P., Cova; Fantini, Fausto. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 37:(1997), pp. 1675-1678. [10.1016/S0026-2714(97)00137-4]
Abstract:
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak sensitivity to hot electron stress. We have investigated underlying physical mechanisms by LF channel noise analysis and Drain Current Transient Spectroscopy (DCTS).
Tipologia CRIS:
Articolo su rivista
Keywords:
Hot-electron.
Pseudomorphic HEMT.
LF Noise.
Elenco autori:
N., Labat; N., Saysset; A., Touboul; Y., Danto; P., Cova; Fantini, Fausto
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