Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's

Articolo

Data di Pubblicazione:

1995

Citazione:

Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's / I., De Munari; Fantini, Fausto; P., Conti. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 35:(1995), pp. 631-635. [10.1016/0026-2714(95)93081-K]

Abstract:

The study of the instability of gate contacts of Al/Ni gate AlGaAs/GaAs HEMT's was performed by means of storage tests carried out at three different temperatures: 200, 240 and 300°C.

Tipologia CRIS:

Articolo su rivista

Keywords:

Schottky contacts. HEMT. GaAs.

Elenco autori:

I., De Munari; Fantini, Fausto; P., Conti

Link alla scheda completa:

https://iris.unimore.it/handle/11380/451778

Pubblicato in:

MICROELECTRONICS RELIABILITY

Journal