Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization
Articolo
Data di Pubblicazione:
2020
Citazione:
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization / Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 168:(2020), pp. 107728-107733. [10.1016/j.sse.2019.107728]
Abstract:
A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications.
Tipologia CRIS:
Articolo su rivista
Keywords:
Modeling; Nonlocal history-dependent impact ionization model; Staircase avalanche photodiode
Elenco autori:
Pilotto, A.; Nichetti, C.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Esseni, D.; Menk, R. H.; Steinhartova, T.
Link alla scheda completa:
Pubblicato in: