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IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES.

Articolo
Data di Pubblicazione:
2001
Citazione:
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES / Magri, Rita; Ossicini, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 63:16(2001), pp. 165303-1-165303-9. [10.1103/PhysRevB.63.165303]
Abstract:
ABSTRACT In this paper we study the electronic and optical properties of (In0.5Ga0.5As)n/(InP)n superlattices, where the Ga0.5In0.5As alloy is described both through the virtual crystal approximation (VCA) and through an appropriate ordered ternary structure. By first-principles calculations of the dielectric tensor elements we address the issue of the giant polarization anisotropy of the optical absorption experimentally observed in these superlattices. The magnitude of the anisotropy depends on the splitting between the hole states at the valence band top which is due to the lowering of the overall symmetry to the C2v point group and it is greatly influenced by strain not only at the interfaces but also in the bulk alloy.
Tipologia CRIS:
Articolo su rivista
Keywords:
semiconductor superlattices; optical anisotropy
Elenco autori:
Magri, Rita; Ossicini, Stefano
Autori di Ateneo:
MAGRI Rita
OSSICINI Stefano
Link alla scheda completa:
https://iris.unimore.it/handle/11380/459074
Pubblicato in:
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Journal
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