Physical Mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/Molecular Dynamics simulations
Contributo in Atti di convegno
Data di Pubblicazione:
2006
Citazione:
Physical Mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/Molecular Dynamics simulations / E., Piccinini; A., Affinito; Brunetti, Rossella; Jacoboni, Carlo; And M., Rudan. - STAMPA. - 110:(2006), pp. 217-220. ( XIV Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors Chicago 25-29 july).
Abstract:
Conduction and noise properties of potassium ions in the KcsA membrane channel are analysed by means of a combined Molecular Dynamics-Monte Carlo numerical approach. The high-voltage part of the experimental I(V) charac-teristics shows a tendency to level off which is reproduced by computational re-sults using a conduction model quite sensitive to the particular set of transition probabilities among the relevant ion occupancy configurations. Noise power spec-tra confirm the existence of correlation between consecutive ion exits from the channel.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
Ion channels; Monte Carlo simulation; Molecular dynamics
Elenco autori:
E., Piccinini; A., Affinito; Brunetti, Rossella; Jacoboni, Carlo; And M., Rudan
Link alla scheda completa:
Titolo del libro:
XIV Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors
Pubblicato in: