Monolithic integration of detectors and transistors on high-resistivity silicon

Articolo
Data di Pubblicazione:
2007
Citazione:
Monolithic integration of detectors and transistors on high-resistivity silicon / G. F., Dalla Betta; G., Batignani; M., Boscardin; L., Bosisio; P., Gregori; L., Pancheri; C., Piemonte; L., Ratti; Verzellesi, Giovanni; N., Zorzi. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 579:2(2007), pp. 658-663. [10.1016/j.nima.2007.05.260]
Abstract:
We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embeddedfront-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed.
Tipologia CRIS:
Articolo su rivista
Keywords:
Fabrication technology; field effect transistors; bipolar junction transistors; silicon radiation detectors; electrical characterization.
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/586081
Pubblicato in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Journal