Data di Pubblicazione:
2005
Citazione:
Meta-stability effects in organic based transistors / Gomes, H. L.; Stallinga, P.; Murgia, M.; Biscarini, F.; Muck, T.; Wagner, V.; Smits, E.; De Leeuw, D. M.. - 5940:(2005), pp. 1-8. ( Organic Field-Effect Transistors IV San Diego, CA, usa 2005) [10.1117/12.617862].
Abstract:
The electrical stability of metal insulator semiconductor (MIS) capacitors and field effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K. and is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
Gate-bias stress; Impedance spectroscopy; Organic transistor; Traps
Elenco autori:
Gomes, H. L.; Stallinga, P.; Murgia, M.; Biscarini, F.; Muck, T.; Wagner, V.; Smits, E.; De Leeuw, D. M.
Link alla scheda completa:
Titolo del libro:
Proceedings of SPIE - The International Society for Optical Engineering