SiGe bipolar technologies for low phase noise RF and microwave applications
Contributo in Atti di convegno
Data di Pubblicazione:
2000
Citazione:
SiGe bipolar technologies for low phase noise RF and microwave applications / Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.. - 1:(2000), pp. 261-264. ( 1999 IEEE MTT-S International Microwave Symposium Boston, MA, USA, 2000).
Abstract:
This paper presents an overview of the low frequency noise performances of both 'abrupt' and 'gradual' SiGe HBTs. We demonstrated that when appropriate device is used, 1/f corner noise frequency in the 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported with III-V devices.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
Link alla scheda completa:
Titolo del libro:
Proceedings of the 1999 IEEE MTT-S International Microwave Symposium
Pubblicato in: