Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices

Articolo
Data di Pubblicazione:
2017
Citazione:
Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices / Daus, A; Lenarczyk, P; Petti, L; Münzenrieder, N; Knobelspies, S; Cantarella, G; Vogt, C; Salvatore, Ga; Luisier, M; Troster, G. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 3:12(2017), pp. N/A-N/A. [10.1002/aelm.201700309]
Tipologia CRIS:
Articolo su rivista
Keywords:
defects; high-k dielectrics; memories; synapses; Charge trapping
Elenco autori:
Daus, A; Lenarczyk, P; Petti, L; Münzenrieder, N; Knobelspies, S; Cantarella, G; Vogt, C; Salvatore, Ga; Luisier, M; Troster, G
Autori di Ateneo:
CANTARELLA Giuseppe
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1290892
Link al Full Text:
Pubblicato in:
ADVANCED ELECTRONIC MATERIALS
Journal