Flexible In-Ga-Zn-O based circuits with two and three metal layers: Simulation and Fabrication study
Articolo
Data di Pubblicazione:
2016
Citazione:
Flexible In-Ga-Zn-O based circuits with two and three metal layers: Simulation and Fabrication study / Cantarella, G; Ishida, K; Petti, L; Münzenrieder, N; Meister, T; Shabanpour, R; Carta, C; Ellinger, F; Troster, G; Salvatore, Ga. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 37:12(2016), pp. 1582-1585. [10.1109/led.2016.2619738]
Tipologia CRIS:
Articolo su rivista
Keywords:
flexible circuits; flexible electronics; Indium-gallium-zinc-oxide; metallization; thin-film transistors (TFTs);
Elenco autori:
Cantarella, G; Ishida, K; Petti, L; Münzenrieder, N; Meister, T; Shabanpour, R; Carta, C; Ellinger, F; Troster, G; Salvatore, Ga
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