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Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size

Articolo
Data di Pubblicazione:
2009
Citazione:
Silicon nanocrystallites in a SiO2 matrix: Role of disorder and size / Guerra, Roberto; Marri, Ivan; Magri, Rita; L., Martin Samos; O., Pulci; Degoli, Elena; Ossicini, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 79:(2009), pp. 155320-1-155320-9. [10.1103/PhysRevB.79.155320]
Abstract:
We compare, through first-principles pseudopotential calculations, the structural, electronic, and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix with that of freestanding, hydrogenated, and hydroxided silicon nanoclusters of corresponding size and shape. We findthat the largest effect on the optoelectronic behavior is due to the amorphization of the embedded nanocluster. In that, the amorphization reduces the fundamental gap while increasing the absorption strength in the visible range. Increasing the nanocluster size does not change substantially this picture but only leads to the reduction in the absorption threshold, following the quantum confinement rule. Finally, through the calculation of the optical absorption spectra both in an independent-particle and a many-body approach, we show that the effect of local fields is crucial for describing properly the optical behavior of the crystalline case while it is of minor importance for amorphous systems.
Tipologia CRIS:
Articolo su rivista
Keywords:
Quantum dots; Silicon nanocrystals; embedding matriux; optoelectronic properties; many-body effects
Elenco autori:
Guerra, Roberto; Marri, Ivan; Magri, Rita; L., Martin Samos; O., Pulci; Degoli, Elena; Ossicini, Stefano
Autori di Ateneo:
DEGOLI Elena
MAGRI Rita
MARRI Ivan
OSSICINI Stefano
Link alla scheda completa:
https://iris.unimore.it/handle/11380/615119
Pubblicato in:
PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS
Journal
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