A technique to extract high-k IPD stack layer thicknesses from C-V measurements

We propose in this letter a simple technique based on C-V measurements which allows to estimate the thicknesses of SiOX and high-k layers of IPD stacks. We apply this technique to IPD Al2O3-based stacks for floating gate memory applications, finding a good agreement with TEM measurements. In addition, simulation results are provided to demonstrate the correctness of the basic assumption of this technique.