Modeling TANOS Memory Program Transients to Investigate Charge Trapping Dynamics

A novel physics-based drift-diffusion model of TANOS program transients is employed to investigate electron trapping and detrapping dynamics in the nitride trapping layer. Trapping process is found to be independent from the energy of injected electrons, while detrapping is dominated by trap-to-band tunneling. Modeling of the trapped charge evolution during program transients allows to extract physical characteristics of the traps and provides useful information for the optimization of TANOS memories.