Data di Pubblicazione:
1979
Citazione:
CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB / Margaritondo, G; Rowe, Je; Bertoni, Carlo Maria; Calandra Buonaura, Carlo; Manghi, Franca. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 20:(1979), pp. 1538-1545. [10.1103/PhysRevB.20.1536]
Abstract:
Experimental angle-integrated photoemission curves taken on Cl-covered (110) surfaces of GaAs, GaSb, and InSb have been compared to tight-binding calculations of the local density of states. The results clearly demonstrate that the Cl adatoms are bound to the anion substrate atoms rather than to the cation substrate atoms. Some qualitative information is also provided on surface relaxation and on chemisorption bond lengths.
Tipologia CRIS:
Articolo su rivista
Keywords:
semiconductor surfaces
Elenco autori:
Margaritondo, G; Rowe, Je; Bertoni, Carlo Maria; Calandra Buonaura, Carlo; Manghi, Franca
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