Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Articolo
Data di Pubblicazione:
2010
Citazione:
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories / A., Suhane; A., Arreghini; G., Van Den Bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 31:9(2010), pp. 936-938. [10.1109/LED.2010.2055824]
Abstract:
We present carrier separation experiments based on direct charge measurement to assess the contributions of electronsand holes to the erase transient of TANOS-like nonvolatilememories. The role of the different carrier species is analyzed asa function of the erase voltage and of the charge configurationat the initial programmed state. We extend the analysis toBand Engineered tunneling barriers, demonstrating that theperformance improvement in these devices lays more in anenhancement of the hole current rather than of the electron one.
Tipologia CRIS:
Articolo su rivista
Keywords:
Carrier separation; Erase transient; TANOS; TANVaS; VariOT
Elenco autori:
A., Suhane; A., Arreghini; G., Van Den Bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt
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