Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study

This paper presents a Multi-Subband Monte Carlo study of the drain current improvements in uniaxially, compressively strained (001)/[110] p-MOSFETs and analyzes the ingredients through which the strain improves the long channel mobility as well as the ION of nanoscale transistors. We first discuss the strain induced mobility enhancement and then address the effects of the strain on the ION. In particular, our results show that compressive stress in (001)/[110] p-MOS transistors increases the ION by improving both the injection velocity and the back-scattering coefficient and that, furthermore, the back-scattering coefficients of the p-MOS transistors have values comparable to those of n-MOS devices with similar channel length.