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Improved understanding of metal–graphene contacts

Articolo
Data di Pubblicazione:
2019
Citazione:
Improved understanding of metal–graphene contacts / Driussi, F., Venica, S., Gahoi, A., Gambi, A., Giannozzi, P., Kataria, S., Lemme, M.C., Palestri, P., Esseni, D.. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - 216:(2019), pp. 111035-N/A. [10.1016/j.mee.2019.111035]
Abstract:
Metal–graphene (M–G) contact resistance (RC) is studied through extensive experimental characterization,Monte–Carlo transport simulations and Density Functional Theory (DFT) analysis. We show that the back–gate voltage dependence of RC cannot be explained only in terms of the resistance of the junction at the edge between contact and channel region. Experiments and DFT calculations indicate a consistent picture where both Ni andAu contacts have a M–G distance larger than the minimum energy distance, and where the M–G distance is crucial in determining the RC value.
Tipologia CRIS:
Articolo su rivista
Keywords:
Contacts; DFT; Graphene; Modeling; Monte-Carlo
Elenco autori:
Driussi, F.; Venica, S.; Gahoi, A.; Gambi, A.; Giannozzi, P.; Kataria, S.; Lemme, M. C.; Palestri, P.; Esseni, D.
Autori di Ateneo:
PALESTRI Pierpaolo
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1328095
Link al Full Text:
https://iris.unimore.it//retrieve/handle/11380/1328095/617136/finalMEE_INFOS2019_short.pdf
Pubblicato in:
MICROELECTRONIC ENGINEERING
Journal
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URL

http://www.journals.elsevier.com/microelectronic-engineering/
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