Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs

A time-dependent simulation procedure has been implemented in a state of the art Monte-Carlo device simulator that includes quantum corrections, and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with L-G = 25 nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (F-T), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.