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Quantum estimation and remote charge sensing with a hole-spin qubit in silicon

Articolo
Data di Pubblicazione:
2023
Citazione:
Quantum estimation and remote charge sensing with a hole-spin qubit in silicon / Forghieri, Gaia; Secchi, Andrea; Bertoni, Andrea; Bordone, Paolo; Troiani, Filippo. - In: PHYSICAL REVIEW RESEARCH. - ISSN 2643-1564. - 5:4(2023), pp. 043159-1-043159-15. [10.1103/PhysRevResearch.5.043159]
Abstract:
Hole-spin qubits in semiconductors represent a mature platform for quantum technological applications. Here we consider their use as quantum sensors, and specifically for inferring the presence and estimating the distance from the qubit of a remote charge. Different approaches are considered, based on the use of single or double quantum dots, ground and out-of-equilibrium states, Rabi and Ramsey measurements, and comparatively analyzed by means of the discrimination probability, and of the classical and quantum Fisher information. Detailed quantitative aspects result from the multiband character of the hole states, which we account for by means of the Luttinger-Kohn Hamiltonian. Furthermore, general conclusions can be drawn on the relative efficiency of the above options, and analytical expressions are derived for the Fisher information of a generic qubit within the Rabi and Ramsey schemes.
Tipologia CRIS:
Articolo su rivista
Keywords:
Hole-spin qubit, charge sensing, quantum estimation
Elenco autori:
Forghieri, Gaia; Secchi, Andrea; Bertoni, Andrea; Bordone, Paolo; Troiani, Filippo
Autori di Ateneo:
BERTONI Andrea
BORDONE Paolo
SECCHI Andrea
TROIANI Filippo
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1329553
Link al Full Text:
https://iris.unimore.it//retrieve/handle/11380/1329553/621855/PhysRevResearch.5.043159.pdf
Pubblicato in:
PHYSICAL REVIEW RESEARCH
Journal
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