Data di Pubblicazione:
1997
Citazione:
Core level analysis of the K/GaP(110) interface / D'Addato, Sergio; P., Bailey; J. M. C., Thornton; D. A., Evans. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 377:(1997), pp. 233-237. [10.1016/S0039-6028(96)01363-5]
Abstract:
The results of a photoelectron spectroscopy study of the K/GaP(110) interface grown at T=120 K are presented for the first time. The analysis shows a big core level shift at lower binding energies (Delta E=1.6 eV at a coverage theta=0.1 ML) for the P 2p core level spectra. We interpret this result in terms of a charge redistribution affecting both types of atoms of the first substrate layer, suggesting some differences from the intuitive picture of strong ionic localised bonding between the alkali and the surface Ga atom.
Tipologia CRIS:
Articolo su rivista
Keywords:
alkali metal; metal-semiconductor interface; photoelectron spectroscopy; CHARGE-TRANSFER; ELECTRONIC-PROPERTIES; GAAS(110) SURFACE; PHOTOEMISSION; STATES; NA/GAP(110); METALS
Elenco autori:
D'Addato, Sergio; P., Bailey; J. M. C., Thornton; D. A., Evans
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