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Carbon-doped GeTe: A promising material for Phase-Change Memories

Articolo
Data di Pubblicazione:
2011
Citazione:
Carbon-doped GeTe: A promising material for Phase-Change Memories / G., Betti Beneventi; L., Perniola; V., Sousa; E., Gourvest; S., Maitrejean; J. C., Bastien; A., Bastard; B., Hyot; A., Fargeix; C., Jahan; J. F., Nodin; A., Persico; A., Fantini; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; P., Zuliani; F., Boulanger. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 65-66:1(2011), pp. 197-204. [10.1016/j.sse.2011.06.029]
Abstract:
This paper investigates Carbon-doped GeTe (GeTeC) as novel material for Phase-Change Memories (PCM). In the first part of the manuscript, a study of GeTeC blanket layers is presented. Focus is on GeTeC amorphous phase stability, which has been studied by means of optical reflectivity and electrical resistivity measurements, and on GeTeC structure and composition, analyzed by XRD and Raman spectroscopy. Then, electrical characterization of GeTeC-based PCM devices is reported: resistance drift, data retention performances, RESET current and power, and SET time have been investigated. Very good data retention properties and reduction of RESET current make GeTeC suitable for both embedded and stand-alone PCM applications, thus suggesting GeTeC as promising candidate to address some of the major issues of today’s PCM technology.
Tipologia CRIS:
Articolo su rivista
Keywords:
Phase-Change Memory (PCM); Phase-change materials; PCRAM; PRAM; Chalcogenides; Doping; GeTe; Carbon; GeTeC; Data retention; Reliability; RESET current
Elenco autori:
G., Betti Beneventi; L., Perniola; V., Sousa; E., Gourvest; S., Maitrejean; J. C., Bastien; A., Bastard; B., Hyot; A., Fargeix; C., Jahan; J. F., Nodin; A., Persico; A., Fantini; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; P., Zuliani; F., Boulanger
Autori di Ateneo:
PAVAN Paolo
Link alla scheda completa:
https://iris.unimore.it/handle/11380/678246
Pubblicato in:
SOLID-STATE ELECTRONICS
Journal
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