Data di Pubblicazione:
2005
Citazione:
Fullband quantization analysis reveals a third valley in (001) silicon inversion layers / Esseni, D.; Palestri, P.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 26:6(2005), pp. 413-415. [10.1109/LED.2005.848126]
Abstract:
This letter presents calculations of the silicon two-dimensional (2-D) band structure obtained by accounting for the fullband energy dispersion of the three-dimensional silicon crystal, as derived from the non-local-pseudopotential method. The most interesting result is the identification of a third valley for the 2-D electron gas in the [001] quantization direction, besides the two families of subbands (the unprimed and primed ones) universally considered according to the effective mass approximation.
Tipologia CRIS:
Articolo su rivista
Keywords:
effective mass approximation; MOSFETs; quantization models; silicon inversion layers; two-dimensional (2-D) density of states (DOS)
Elenco autori:
Esseni, D.; Palestri, P.
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