Data di Pubblicazione:
1993
Citazione:
THE ELECTRONIC-STRUCTURE OF GALLIUM NITRIDE / M., P., Bertoni, C.M., L., R., F., F.. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - STAMPA. - 185:(1993), pp. 404-409. [10.1016/0921-4526(93)90269-C]
Abstract:
The results of a density functional calculation on gallium nitride are given. We use norm-conserving pseudopotentials with sufficiently extended sets of plane waves to investigate the ground-state properties and the electronic band structure for the zincblende phase of GaN and compare them with the corresponding results for the wurtzite structure. A comparison with the outcomes of other calculations and with the existing experimental data is also given.
Tipologia CRIS:
Articolo su rivista
Keywords:
Wide-gap semiconductors.
GaN.
Zincblende and wurtzite structures.
Elenco autori:
M., Palummo; Bertoni, Carlo Maria; L., Reining; F., Finocchi
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