Data di Pubblicazione:
1992
Citazione:
Si‐GaAs(001) superlattices / Sorba, Lucia; G., Bratina; A., Franciosi; L., Tapfer; G., Scamarcio; V., Spagnolo; Molinari, Elisa. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 61:(1992), pp. 1570-1572. [10.1063/1.107499]
Abstract:
Si‐GaAs(001) superlattices have been grown by molecular beam epitaxy. X‐ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (∼50–70 cm−1) confinement‐ and strain‐induced shifts of the Si‐like optical modes.
Tipologia CRIS:
Articolo su rivista
Keywords:
MOLECULAR-BEAM EPITAXY, BAND OFFSETS, SI/GE SUPERLATTICES, RAMAN-SCATTERING, SI, INTERFACE, GAAS, STABILITY, LAYERS, HETEROSTRUCTURES
Elenco autori:
Sorba, Lucia; G., Bratina; A., Franciosi; L., Tapfer; G., Scamarcio; V., Spagnolo; Molinari, Elisa
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