Layout effects on the thermal metrics of multichannel FinFETs

FinFET technology is widely used for advanced digital, RF, and analog applications due to its high performance and scalability. However, the non-planar architecture introduces increased electrical parasitics and self-heating effects (SHEs), which can degrade device reliability and performance. We analyze, by simulation, the thermal behavior of four FinFET layouts designed with realistic process rules, focusing on transistor channels at the boundary of the large FinFET arrays required by RF applications. The findings highlight key thermal trade-offs of FinFET structures and suggest ways to balance static and dynamic self-heating for optimum performance and limited overtemperature.