Characterization and TCAD modelling of diamond Schottky barrier diodes as test structures for the development of a high-power electronics technology
Abstract
Data di Pubblicazione:
2025
Citazione:
Characterization and TCAD modelling of diamond Schottky barrier diodes as test structures for the development of a high-power electronics technology / Bassaler, Julien; Biasin, Giacomo; Buffolo, Matteo; Chini, Alessandro; De Santi, Carlo; Manuelfregolent, ; Letellier, Juliette; Maurya, Vishwajeet; Meneghini, Matteo; Verzellesi, Giovanni. - (2025). ( 35th International Conference on Diamond and Carbon Materials (ICDCM 2025) Glasgow (UK) 31/8/25-4/9/25).
Tipologia CRIS:
Abstract in Atti di Convegno
Elenco autori:
Bassaler, Julien; Biasin, Giacomo; Buffolo, Matteo; Chini, Alessandro; De Santi, Carlo; Manuelfregolent, ; Letellier, Juliette; Maurya, Vishwajeet; Meneghini, Matteo; Verzellesi, Giovanni
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Titolo del libro:
Proceedings of ICDCM 2025