Energy band associated with dangling bonds in silicon

High-frequency capacitance measurements as a function of applied bias have been performed between 77 K and 250 K on Schottky Pd2Si-Si diodes, obtained from previously deformed n-silicon slices. Having used low dislocation densities and high-resistivity silicon we were able to check, in the range of temperatures investigated, the validity of the half-filled-band model, which assumes the existence of dangling bonds associated with edge-type dislocation. Good aggrement between theory and experiments was found, confirming that, with the edge dislocation in silicon, it can be associated with a one-dimensional energy band, of width 0.24 eV and a neutral level E0 at 0.40 eV above the top of the valence band; it was also confirmed that the edge dislocations are surrounded by cylindrical charge clouds, whose effective radius is comparable with the Debye screening length.