Surface Modification of InAs(110) Surface by Low Energy Ion Sputtering

Articolo

Data di Pubblicazione:

1997

Citazione:

Surface Modification of InAs(110) Surface by Low Energy Ion Sputtering / V., Martinelli; L., Siller; M. G., Betti; C., Mariani; Del Pennino, Umberto. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 391:(1997), pp. 73-80. [10.1016/S0039-6028(97)00456-1]

Abstract:

By ultraviolet photoemission spectroscopy and high-resolution electron energy loss spectroscopy we have detected the formation of a charge accumulation layer at the surface of a hydrogenated Si(111)(1 x 1) single crystal at very low potassium coverages.

Tipologia CRIS:

Articolo su rivista

Keywords:

InAs(110); Sputtering; Charge accunulation layer; Hydrogenated Si(111)

Elenco autori:

V., Martinelli; L., Siller; M. G., Betti; C., Mariani; Del Pennino, Umberto

Link alla scheda completa:

https://iris.unimore.it/handle/11380/761896

Pubblicato in:

SURFACE SCIENCE

Journal