Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel

Abstract

Data di Pubblicazione:

2026

Citazione:

Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel / Goswami, R., Palestri, P., Selmi, L.. - (2026). (EUROSOI-ULIS Granada (Spain) maggio 2026).

Tipologia CRIS:

Abstract in Atti di Convegno

Elenco autori:

Goswami, R.; Palestri, P.; Selmi, L.

Autori di Ateneo:

GOSWAMI Rupam

PALESTRI Pierpaolo

SELMI LUCA

Link alla scheda completa:

https://iris.unimore.it/handle/11380/1410448

Link al Full Text:

https://iris.unimore.it//retrieve/handle/11380/1410448/989104/goswamiEUROSOI2026.pdf

Titolo del libro:

Proceedings EUROSOI-ULIS 2026

Progetto:

Single Trap and Low Frequency 1/f Noise Modeling in MOSFETs with Dirac Materials or 2D Semiconductor Channel

Goswami, R.; Palestri, P.; Selmi, L.

DIRAC COLD-SOURCE TRANSISTOR TECHNOLOGIES FOR ATTOJOULE SWITCHING (ATTOSWITCH)