Data di Pubblicazione:
1992
Citazione:
VIBRATIONAL AND COLLECTIVE EXCITATIONS IN THE BI/GAAS(110) SYSTEM / Mariani, C; De Renzi, Valentina; Compano, R.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - ELETTRONICO. - 56-8:(1992), pp. 247-251. [10.1016/0169-4332(92)90242-P]
Abstract:
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(110)] system. Analysis of the elastic peak intensity, of the substrate's Fuchs-Kliewer phonon and dopant-induced free carrier plasmon, shows the influence exerted on GaAs by the first semiconducting Bi monolayer and by the subsequent semimetallic clusters at higher coverage.
Tipologia CRIS:
Articolo su rivista
Keywords:
metal semiconductor interfaces
Elenco autori:
Mariani, C; De Renzi, Valentina; Compano, R.
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