Data di Pubblicazione:
1999
Citazione:
Surface gap and surface electronic states in CuGeO3 single crystal / Corradini, Valdis; Goldoni, A; Parmigiani, F; Kim, C; Revcolevschi, A; Sangaletti, L; Del Pennino, Umberto. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 420:(1999), pp. 142-147. [10.1016/S0039-6028(98)00793-4]
Abstract:
The surface and bulk electronic excitations of CuGeO3 are investigated by means of electron energy loss and polarized X-ray absorption spectroscopy. CuGeO3 shows a surface charge transfer gap of about 3.0+/-0.3 eV. The unoccupied oxygen derived density of states, as probed by X-ray absorption at the O 1s edge, is in good agreement with recent many-body calculations. (C) 1999 Elsevier Science B.V. All rights reserved.
Tipologia CRIS:
Articolo su rivista
Keywords:
CuGeO3; electron spectroscopy; surface electronic structure
Elenco autori:
Corradini, Valdis; Goldoni, A; Parmigiani, F; Kim, C; Revcolevschi, A; Sangaletti, L; Del Pennino, Umberto
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