QUENCHING THE SURFACE ELECTRONIC-STRUCTURE OF P-CONTAINING-III-V SEMICONDUCTORS VIA ORDERED (1X1) SB OVERLAYERS - A PL2,3VV AUGER LINE-SHAPE ANALYSIS
Articolo
Data di Pubblicazione:
1992
Citazione:
QUENCHING THE SURFACE ELECTRONIC-STRUCTURE OF P-CONTAINING-III-V SEMICONDUCTORS VIA ORDERED (1X1) SB OVERLAYERS - A PL2,3VV AUGER LINE-SHAPE ANALYSIS / Sancrotti, M; Duo, L; Calliari, L; Marchetti, F; Cosso, R; Weightman, P; Manghi, Franca. - In: SURFACE SCIENCE. - ISSN 0039-6028. - STAMPA. - 270:(1992), pp. 838-843. [10.1016/0039-6028(92)91358-I]
Abstract:
We report experimental PL2,3VV Auger line shapes of as-cleaved GaP(110) and InP(110) surfaces and of the relative Sb p(1 x 1) interfaces along with calculated slab-resolved densities of states (DOS). The joint experimental and theoretical analysis allows us to disentangle the surface-specific PL2,3VV contribution from the total signal of the as-cleaved surfaces.
Tipologia CRIS:
Articolo su rivista
Keywords:
Metal-semiconductor interfaces
III-V semiconductors
Elenco autori:
Sancrotti, M; Duo, L; Calliari, L; Marchetti, F; Cosso, R; Weightman, P; Manghi, Franca
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