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  1. Research Outputs

Liquid-Gated Organic Electronic Devices Based on High-Performance Solution-Processed Molecular Semiconductor

Academic Article
Publication Date:
2017
Short description:
Liquid-Gated Organic Electronic Devices Based on High-Performance Solution-Processed Molecular Semiconductor / Di Lauro, Michele; Berto, Marcello; Giordani, Martina; Benaglia, Simone; Schweicher, Guillaume; Vuillaume, Dominique; Bortolotti, Carlo Augusto; Geerts, Yves H.; Biscarini, Fabio. - In: ADVANCED ELECTRONIC MATERIALS. - ISSN 2199-160X. - 3:9(2017), pp. 1700159-1700159. [10.1002/aelm.201700159]
abstract:
High-mobility organic semiconductors such as [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives are potential candidates for ultrasensitive biosensors. Here 2,7-dioctyl BTBT (C8-BTBT-C8)-based liquid-gated organic electronic devices are demonstrated with two device architectures, viz. electrolyte-gated organic field-effect transistor (EGOFET) and electrolyte-gated organic synapstor (EGOS), and different electrode materials, viz. gold and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). EGOFETs exhibit a mean transconductance of about 45 µS, on a par with literature, and a max value up to 256 µS at the state-of-the-art in aqueous electrolyte, with a mean product of charge mobility and effective capacitance of about 0.112 and 0.044 µS V−1 for gold and PEDOT:PSS electrodes, respectively. EGOSs exhibit a dynamic response with 15 ms characteristic timescale with Au electrodes and about twice with PEDOT:PSS electrodes. These results demonstrate a promising route for sensing applications in physiological environment based on fully solution-processed whole-organic electronic devices featuring ultrahigh sensitivity and fast response.
Iris type:
Articolo su rivista
Keywords:
organic bioelectronics, EGOFET, EGOS, C8-BTBT, synapstor
List of contributors:
Di Lauro, Michele; Berto, Marcello; Giordani, Martina; Benaglia, Simone; Schweicher, Guillaume; Vuillaume, Dominique; Bortolotti, Carlo Augusto; Geerts, Yves H.; Biscarini, Fabio
Authors of the University:
BERTO MARCELLO
BISCARINI FABIO
BORTOLOTTI Carlo Augusto
Handle:
https://iris.unimore.it/handle/11380/1144128
Full Text:
https://iris.unimore.it//retrieve/handle/11380/1144128/623543/aelm.201700159.pdf
Published in:
ADVANCED ELECTRONIC MATERIALS
Journal
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